2SK3617 no.8112-1/4 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8112 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 21405pa ts im ta-100867 2SK3617 n-channel silicon mosfet general-purpose switching device applications features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 100 v gate-to-source voltage v gss 20 v drain current (dc) i d 6a drain current (pulse) i dp pw 10 m s, duty cycle 1% 24 a allowable power dissipation p d 1w tc=25 c15w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 100 v zero-gate voltage drain current i dss v ds =100v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =3a 3 5 s r ds (on)1 i d =3a, v gs =10v 180 225 m w static drain-to-source on-state resistance r ds (on)2 i d =3a, v gs =4v 225 315 m w input capacitance ciss v ds =20v, f=1mhz 530 pf output capacitance coss v ds =20v, f=1mhz 45 pf reverse transfer capacitance crss v ds =20v, f=1mhz 35 pf turn-on delay time t d (on) see specified test circuit. 9 ns rise time t r see specified test circuit. 5 ns turn-off delay time t d (off) see specified test circuit. 54 ns fall time t f see specified test circuit. 25 ns continued on next page.
2SK3617 no.8112-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit total gate charge qg v ds =50v, v gs =10v, i d =6a 13 nc gate-to-source charge qgs v ds =50v, v gs =10v, i d =6a 2.1 nc gate-to-drain miller charge qgd v ds =50v, v gs =10v, i d =6a 2.8 nc diode forward voltage v sd i s =6a, v gs =0 0.9 1.2 v package dimensions package dimensions unit : mm unit : mm 2083b 2092b switching time test circuit 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp-fa 6.5 2.3 0.5 1.5 5.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 12 4 3 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp 5.0 6.5 0.85 0.7 0.6 1.5 5.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3 pw=10 m s d.c. 1% 10v 0v v in p. g 50 w g s i d =3a r l =16.7 w v dd =50v v out v in d 2SK3617 0 0 0.5 1.0 1.5 5.0 3.5 1.0 3.0 2.5 2.0 4.0 4.5 2.0 3.0 4.0 5.0 0.5 1.5 2.5 3.5 4.5 i d -- v ds it04718 0 0.5 1.0 1.5 2.0 2.5 3.0 4.0 3.5 0 2 1 3 4 5 i d -- v gs it04719 6.0v 5.0v 10.0v 3.5v 4.0v 8.0v v gs =2.5v 3.0v v ds =10v --25 c tc=75 c 25 c drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a
2SK3617 no.8112-3/4 024681012 280 320 340 240 200 400 360 380 160 300 180 260 220 140 14 16 18 20 r ds (on) -- v gs it08292 r ds (on) -- tc it08293 --60 80 140 200 340 400 280 120 180 320 380 260 100 160 300 360 240 220 420 --40 --20 0 20 40 60 80 100 120 140 160 tc=25 c i d =3a i d =3a, v gs =4v i d =3a, v gs =10v 0 0 1 2 3 4 5 6 7 8 14 81012 26 4 9 10 v gs -- qg it08295 a s o 5 2 3 5 7 2 3 5 7 2 3 2 3 5 7 10 1.0 0.1 0.01 23 57 23 57 23 57 2 0.1 1.0 10 100 it08296 0 10 100 510 1000 7 5 3 2 7 5 3 2 30 15 20 25 ciss, coss, crss -- v ds it08294 0.1 1.0 1.0 23 57 23 57 100 2 10 7 5 3 2 7 5 3 2 sw time -- i d it04724 it04722 0.01 0.1 0.1 1.0 23 57 23 57 23 57 10 1.0 7 5 3 2 7 5 3 2 10 ? y fs ? -- i d it04723 0.2 0.6 0.4 0.8 1.0 1.2 0.01 0.1 10 1.0 7 5 3 2 7 5 3 2 7 5 3 2 i f -- v sd v ds =10v 75 c 25 c tc= --25 c v gs =0 --25 c 25 c tc=75 c f=1mhz ciss coss crss v ds =50v i d =6a v dd =50v v gs =10v t d (on) t d (off) t r t f 100ms dc operation (tc=25 c) 10ms i dp =24a 10 m s 100 m s operation in this area is limited by r ds (on). i d =6a 1ms static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w case temperature, tc -- c gate-to-source voltage, v gs -- v drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward drain current, i f -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a tc=25 c single pulse
2SK3617 no.8112-4/4 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2005. specifications and information herein are subject to change without notice. 0 0 20 40 0.2 0.4 60 0.8 0.6 80 100 120 1.0 1.2 140 160 p d -- ta it08297 p d -- tc 0 0 20 40 5 60 10 80 100 120 15 20 140 160 it08298 ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w no heat sink note on usage : since the 2SK3617 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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